cs223-4m CS223-4N 4.0 amp scr 600 thru 800 volts sot-223 case central semiconductor corp. tm r0 (11-may 2004) description: the central semiconductor cs223-4m series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) cs223 cs223 symbol -4m -4n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =85c) i t(rms) 4.0 a peak one cycle surge (t=10ms) i tsm 30 a i 2 t value for fusing (t=10ms) i 2 t 4.5 a 2 s peak gate power (tp=20s) p gm 3.0 w average gate power dissipation p g(av) 0.2 w peak gate current (tp=20s) i gm 1.2 a critical rate of rise of on-state current di/dt 50 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance ja 62.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1k ? 10 a i drm, i rrm rated v drm , v rrm, r gk =1k ?, t c =125c 200 a i gt v d =12v, r l =10 ? 20 38 200 a i h i t =50ma, r gk =1k ? 0.25 2.0 ma v gt v d =12v, r l =10 ? 0.55 0.8 v v tm i tm =8.0a, tp=380s 1.6 1.8 v dv/dt v d = 2 / 3 v drm, r gk =1k ?, t c =125c 10 v/s
min max min max a 0 10 0 10 b 0.059 0.071 1.50 1.80 c 0.018 --- 0.45 --- d 0.000 0.004 0.00 0.10 e f 0.009 0.014 0.23 0.35 g 0.248 0.264 6.30 6.70 h 0.114 0.122 2.90 3.10 i 0.130 0.146 3.30 3.70 j 0.264 0.287 6.70 7.30 k 0.024 0.033 0.60 0.85 l m sot-223 (rev: r3) 15 0.091 0.181 4.60 2.30 15 dimensions symbol millimeters inches central semiconductor corp. tm sot-223 case - mechanical outline cs223-4m CS223-4N 4.0 amp scr 600 thru 800 volts r0 (11-may 2004) lead code: 1) cathode 2) anode 3) gate 4) anode marking code: full part number
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